Invention Grant
- Patent Title: High power ceramic on copper package
- Patent Title (中): 大功率陶瓷铜包装
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Application No.: US12436652Application Date: 2009-05-06
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Publication No.: US08110445B2Publication Date: 2012-02-07
- Inventor: Anwar A. Mohammed , Soon Ing Chew , Donald Fowlkes
- Applicant: Anwar A. Mohammed , Soon Ing Chew , Donald Fowlkes
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
According to an embodiment of a high power package, the package includes a copper heat sink, a ceramic lead frame and a semiconductor chip. The copper heat sink has a thermal conductivity of at least 350 W/mK. The ceramic lead frame is attached to the copper heat sink with an epoxy. The semiconductor chip is attached to the copper heat sink on the same side as the lead frame with an electrically conductive material having a melting point of about 280° C. or greater.
Public/Granted literature
- US20100283134A1 High Power Ceramic on Copper Package Public/Granted day:2010-11-11
Information query
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