Invention Grant
US08110453B2 Low temperature thin film transistor process, device property, and device stability improvement
有权
低温薄膜晶体管工艺，器件性能和器件稳定性的提高
- Patent Title: Low temperature thin film transistor process, device property, and device stability improvement
- Patent Title (中): 低温薄膜晶体管工艺，器件性能和器件稳定性的提高
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Application No.: US12425228Application Date: 2009-04-16
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Publication No.: US08110453B2Publication Date: 2012-02-07
- Inventor: Ya-Tang Yang , Beom Soo Park , Tae Kyung Won , Soo Young Choi , John M. White
- Applicant: Ya-Tang Yang , Beom Soo Park , Tae Kyung Won , Soo Young Choi , John M. White
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/336 ; H01L21/20 ; H01L29/786
Abstract:
A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
Public/Granted literature
- US20090261331A1 LOW TEMPERATURE THIN FILM TRANSISTOR PROCESS, DEVICE PROPERTY, AND DEVICE STABILITY IMPROVEMENT Public/Granted day:2009-10-22
Information query
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