MOSFET having a channel region with enhanced stress and method of forming same

Invention Grant

US08110459B2 MOSFET having a channel region with enhanced stress and method of forming same 失效

Title translation: MOSFET具有增强应力的沟道区和形成其的方法

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Patent Title: MOSFET having a channel region with enhanced stress and method of forming same
Patent Title (中): MOSFET具有增强应力的沟道区和形成其的方法
Application No.: US12767964

Application Date: 2010-04-27
Publication No.: US08110459B2

Publication Date: 2012-02-07
Inventor: Koichi Matsumoto
Applicant: Koichi Matsumoto
Applicant Address: JP Tokyo US NJ Park Ridge
Assignee: Sony Corporation,Sony Electronics Inc.
Current Assignee: Sony Corporation,Sony Electronics Inc.
Current Assignee Address: JP Tokyo US NJ Park Ridge
Agency: Mayer & Williams PC
Agent Stuart H. Mayer, Esq.; Karin L. Williams, Esq
Main IPC: H01L21/8238
IPC: H01L21/8238

MOSFET having a channel region with enhanced stress and method of forming same

Abstract:

A semiconductor device is provided that includes a semiconductor substrate, an n-channel MOSFET formed on the substrate and a p-channel MOSFET formed on the substrate. A first layer is formed to cover the n-channel MOSFET, wherein the first layer has a first flexure-induced stress. A second layer is formed to cover the p-channel MOSFET, wherein the second layer has a second flexure-induced stress.

Abstract(Chinese):

提供一种半导体器件，其包括半导体衬底，形成在衬底上的n沟道MOSFET和形成在衬底上的p沟道MOSFET。形成第一层以覆盖n沟道MOSFET，其中第一层具有第一挠曲引起的应力。形成第二层以覆盖p沟道MOSFET，其中第二层具有第二挠曲引起的应力。

Public/Granted literature

US20100203690A1 MOSFET HAVING A CHANNEL REGION WITH ENHANCED STRESS AND METHOD OF FORMING SAME Public/Granted day:2010-08-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS