A method for producing stacked and self-aligned components on a substrate, including: providing a substrate made of monocrystalline silicon having one face enabling production of components, forming a stack of layers on the face of the substrate, selective etching by a gaseous mixture comprising gaseous HCl conveyed by a carrier gas and at a temperature between 450° C. and 900° C., depositing resin, implementing lithography of the resin, replacing resin eliminated during the lithography with a material for confining remaining resin, and forming elements of the components.