Invention Grant
US08110462B2 Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection
有权
降低手指末端MOSFET击穿电压(BV),用于静电放电(ESD)保护
- Patent Title: Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection
- Patent Title (中): 降低手指末端MOSFET击穿电压(BV),用于静电放电(ESD)保护
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Application No.: US11356256Application Date: 2006-02-16
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Publication No.: US08110462B2Publication Date: 2012-02-07
- Inventor: Robert Michael Steinhoff
- Applicant: Robert Michael Steinhoff
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/8238
- IPC: H01L21/8238

Abstract:
The present invention relates to electrostatic discharge (ESD) protection circuitry. Multiple techniques are presented to adjust one or more ends of one or more fingers of an ESD protection device so that the ends of the fingers have a reduced initial trigger or breakdown voltage as compared to other portions of the fingers, and in particular to central portions of the fingers. In this manner, most, if not all, of the adjusted ends of the fingers are likely to trigger or fire before any of the respective fingers completely enters a snapback region and begins to conduct ESD current. Consequently, the ESD current is more likely to be distributed among all or substantially all of the plurality of fingers rather than be concentrated within one or merely a few fingers. As a result, potential harm to the ESD protection device (e.g., from current crowding) is mitigated and the effectiveness of the device is improved.
Public/Granted literature
- US20060138547A1 Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection Public/Granted day:2006-06-29
Information query
IPC分类: