Multiple Vt field-effect transistor devices

Invention Grant

US08110467B2 Multiple Vt field-effect transistor devices 有权

Title translation: 多Vt场效应晶体管器件

Please log in to see more content

Patent Title: Multiple Vt field-effect transistor devices
Patent Title (中): 多Vt场效应晶体管器件
Application No.: US12427247

Application Date: 2009-04-21
Publication No.: US08110467B2

Publication Date: 2012-02-07
Inventor: Josephine B. Chang , Leland Chang , Renee T. Mo , Vijay Narayanan , Jeffrey W. Sleight
Applicant: Josephine B. Chang , Leland Chang , Renee T. Mo , Vijay Narayanan , Jeffrey W. Sleight
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Michael J. Chang, LLC
Agent Vazken Alexanian
Main IPC: H01L21/8236
IPC: H01L21/8236

Multiple Vt field-effect transistor devices

Abstract:

Multiple threshold voltage (Vt) field-effect transistor (FET) devices and techniques for the fabrication thereof are provided. In one aspect, a FET device is provided including a source region; a drain region; at least one channel interconnecting the source and drain regions; and a gate, surrounding at least a portion of the channel, configured to have multiple threshold voltages due to the selective placement of at least one band edge metal throughout the gate.

Abstract(Chinese):

提供了多阈值电压（Vt）场效应晶体管（FET）器件及其制造技术。一方面，提供一种FET器件，其包括源极区域; 漏区; 将源极和漏极区互连的至少一个沟道; 以及围绕通道的至少一部分的栅极，其被配置为具有多个阈值电压，这是由于至少一个带边缘金属选择性地放置在整个栅极上。

Public/Granted literature

US20100264497A1 Multiple Vt Field-Effect Transistor Devices Public/Granted day:2010-10-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8236	........增强型和耗尽型晶体管的组合