Invention Grant
- Patent Title: High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
- Patent Title (中): 由不均匀的压载源保护的大功率和高温半导体功率器件
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Application No.: US13199251Application Date: 2011-08-23
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Publication No.: US08110472B2Publication Date: 2012-02-07
- Inventor: François Hébert , Anup Bhalla
- Applicant: François Hébert , Anup Bhalla
- Applicant Address: BM
- Assignee: Alpha and Omega Semiconductor Ltd
- Current Assignee: Alpha and Omega Semiconductor Ltd
- Current Assignee Address: BM
- Agent Bo-In Lin
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222
Abstract:
A semiconductor power device is formed on a semiconductor substrate. The semiconductor power device includes a plurality of transistor cells distributed over different areas having varying amount of ballasting resistances depending on a local thermal dissipation in each of the different areas. An exemplary embodiment has the transistor cells with a lower ballasting resistance formed near a peripheral area and the transistor cells having a higher ballasting resistance are formed near a bond pad area. Another exemplary embodiment comprises cells with a highest ballasting resistance formed in an area around a wire-bonding pad, the transistor cells having a lower resistance are formed underneath the wire-bonding pad connected to bonding wires for dissipating heat and the transistor cells having a lowest ballasting resistance are formed in an areas away from the bonding pad.
Public/Granted literature
- US20110306175A1 HIGH POWER AND HIGH TEMPERATURE SEMICONDUCTOR POWER DEVICES PROTECTED BY NON-UNIFORM BALLASTED SOURCES Public/Granted day:2011-12-15
Information query
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