Invention Grant
US08110480B2 Method and structure for fabricating solar cells using a thick layer transfer process
有权
使用厚层转移工艺制造太阳能电池的方法和结构
- Patent Title: Method and structure for fabricating solar cells using a thick layer transfer process
- Patent Title (中): 使用厚层转移工艺制造太阳能电池的方法和结构
-
Application No.: US12730113Application Date: 2010-03-23
-
Publication No.: US08110480B2Publication Date: 2012-02-07
- Inventor: Francois J. Henley
- Applicant: Francois J. Henley
- Applicant Address: US CA San Jose
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material.
Public/Granted literature
- US20100178723A1 Method and Structure for Fabricating Solar Cells Using a Thick Layer Transfer Process Public/Granted day:2010-07-15
Information query
IPC分类:
