Invention Grant
US08110483B2 Forming an extremely thin semiconductor-on-insulator (ETSOI) layer
有权
形成极薄的绝缘体上半导体（ETSOI）层
- Patent Title: Forming an extremely thin semiconductor-on-insulator (ETSOI) layer
- Patent Title (中): 形成极薄的绝缘体上半导体（ETSOI）层
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Application No.: US12603737Application Date: 2009-10-22
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Publication No.: US08110483B2Publication Date: 2012-02-07
- Inventor: Wagdi W. Abadeer , Kiran V. Chatty , Jason E. Cummings , Toshiharu Furukawa , Robert J. Gauthier , Jed H. Rankin, Jr. , Robert R. Robison , William R. Tonti
- Applicant: Wagdi W. Abadeer , Lilian Kamal, legal representative , Kiran V. Chatty , Jason E. Cummings , Toshiharu Furukawa , Robert J. Gauthier , Jed H. Rankin, Jr. , Robert R. Robison , William R. Tonti
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Richard Kotulak
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
Solutions for forming an extremely thin semiconductor-on-insulator (ETSOI) layer are disclosed. In one embodiment, a method includes providing a wafer including a plurality of semiconductor-on-insulator (SOI) layer regions separated by at least one shallow trench isolation (STI); amorphizing the plurality of SOI layer regions by implanting the plurality of SOI layer regions with an implant species; and removing a portion of the amorphized SOI layer region to form at least one recess in the amorphized SOI layer region.
Public/Granted literature
- US20110095366A1 FORMING AN EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER Public/Granted day:2011-04-28
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