Invention Grant
US08110496B2 Method for performing chemical shrink process over BARC (bottom anti-reflective coating)
有权
在BARC（底部防反射涂层）上进行化学收缩工艺的方法
- Patent Title: Method for performing chemical shrink process over BARC (bottom anti-reflective coating)
- Patent Title (中): 在BARC（底部防反射涂层）上进行化学收缩工艺的方法
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Application No.: US11831137Application Date: 2007-07-31
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Publication No.: US08110496B2Publication Date: 2012-02-07
- Inventor: Todd Christopher Bailey , Colin J. Brodsky , Allen H. Gabor
- Applicant: Todd Christopher Bailey , Colin J. Brodsky , Allen H. Gabor
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Joseph P. Abate
- Main IPC: B32B3/24
- IPC: B32B3/24 ; H01L21/4763
Abstract:
A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
Public/Granted literature
- US20080020198A1 METHOD FOR PERFORMING CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING) Public/Granted day:2008-01-24
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