Method for manufacturing semiconductor device

Invention Grant

US08110497B2 Method for manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method for manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US12646598

Application Date: 2009-12-23
Publication No.: US08110497B2

Publication Date: 2012-02-07
Inventor: Atsuko Sakata , Soichi Yamashita , Yasuyuki Sonoda , Hiroshi Toyoda , Masahiko Hasunuma
Applicant: Atsuko Sakata , Soichi Yamashita , Yasuyuki Sonoda , Hiroshi Toyoda , Masahiko Hasunuma
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Priority: JP2008-334976 20081226; JP2009-287332 20091218
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for manufacturing semiconductor device

Abstract:

An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

Abstract(Chinese):

本发明的实施例提供一种用于制造半导体器件的方法。该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

Public/Granted literature

US20100167529A1 Method for Manufacturing Semiconductor Device Public/Granted day:2010-07-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）