Invention Grant
US08110503B2 Surface preparation for thin film growth by enhanced nucleation 有权
通过增强成核制备薄膜生长的表面处理

Surface preparation for thin film growth by enhanced nucleation
Abstract:
Various processes and related systems are provided for making structures on substrate surfaces. Disclosed are methods of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving surface to output from a remote plasma of an inert gas. The remote plasma has an energy low enough to substantially avoid etching or sputtering of the receiving surface but sufficient to generate a treated receiving surface. The treated surface is contacted with a deposition gas, thereby making the structure supported by the substrate.
Public/Granted literature
Information query
Patent Agency Ranking
0/0