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US08110505B2 Lead frame manufactured from low-priced material and not requiring strict process control, semiconductor package including the same, and method of manufacturing the lead frame and the semiconductor package 有权
引线框架由低价格材料制造而不需要严格的工艺控制，包括其的半导体封装以及引线框和半导体封装的制造方法

  • Patent Title: Lead frame manufactured from low-priced material and not requiring strict process control, semiconductor package including the same, and method of manufacturing the lead frame and the semiconductor package
  • Patent Title (中): 引线框架由低价格材料制造而不需要严格的工艺控制，包括其的半导体封装以及引线框和半导体封装的制造方法
  • Application No.: US12466655
    Application Date: 2009-05-15
  • Publication No.: US08110505B2
    Publication Date: 2012-02-07
  • Inventor: Sung-il Kang , Chang-han Shim
  • Applicant: Sung-il Kang , Chang-han Shim
  • Applicant Address: KR Changwon
  • Assignee: Samsung Techwin Co., Ltd.
  • Current Assignee: Samsung Techwin Co., Ltd.
  • Current Assignee Address: KR Changwon
  • Agency: Sughrue Mion, PLLC
  • Priority: KR10-2008-0045512 20080516
  • Main IPC: H01L21/311
  • IPC: H01L21/311
Lead frame manufactured from low-priced material and not requiring strict process control, semiconductor package including the same, and method of manufacturing the lead frame and the semiconductor package
Abstract:
Provided are a lead frame, a semiconductor package, and a method of manufacturing the lead frame and the semiconductor package. The lead frame includes: a die pad on which a semiconductor chip is installable; a plurality of lead patterns formed around a circumference of the die pad; an insulating organic material filling etching spaces interposed between the die pad and the lead patterns and structurally supporting the die pad and the lead patterns; and a pre-plating layer formed on both upper and lower surfaces of the die pad and the lead patterns.
Abstract(Chinese):

提供引线框架，半导体封装以及制造引线框架和半导体封装件的方法。 引线框架包括：可安装半导体芯片的管芯焊盘; 形成在所述管芯焊盘的周围的多个引线图案; 填充蚀刻空间的绝缘有机材料，其插入在所述管芯焊盘和引线图案之间，并且结构地支撑所述管芯焊盘和所述引线图案; 以及形成在管芯焊盘的上表面和下表面上的预镀层和引线图案。

Public/Granted literature
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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31 .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105 ......后处理
H01L21/311 .......绝缘层的刻蚀
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