Methods of forming fine patterns in semiconductor devices

Invention Grant

US08110506B2 Methods of forming fine patterns in semiconductor devices 有权

Title translation: 在半导体器件中形成精细图案的方法

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Patent Title: Methods of forming fine patterns in semiconductor devices
Patent Title (中): 在半导体器件中形成精细图案的方法
Application No.: US12428963

Application Date: 2009-04-23
Publication No.: US08110506B2

Publication Date: 2012-02-07
Inventor: Jae-Ho Min , O-Ik Kwon , Bum-Soo Kim , Dong-chan Kim , Myeong-cheol Kim
Applicant: Jae-Ho Min , O-Ik Kwon , Bum-Soo Kim , Dong-chan Kim , Myeong-cheol Kim
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Myers Bigel Sibley & Sajovec, P.A.
Priority: KR10-2008-0078519 20080827
Main IPC: H01L21/302
IPC: H01L21/302 ; H01L21/461

Methods of forming fine patterns in semiconductor devices

Abstract:

Methods of forming a semiconductor device can be provided by simultaneously forming a plurality of mask patterns using self-aligned reverse patterning, including respective mask pattern elements having different widths.

Abstract(Chinese):

可以通过使用自对准反向图案化来同时形成多个掩模图案来提供形成半导体器件的方法，包括具有不同宽度的各个掩模图案元件。

Public/Granted literature

US20100055914A1 METHODS OF FORMING FINE PATTERNS IN SEMICONDUCTOR DEVICES Public/Granted day:2010-03-04

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割