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US08110508B2 Method of forming a bump structure using an etching composition for an under bump metallurgy layer 有权
使用用于凸块下金属层的蚀刻组合物形成凸块结构的方法

Method of forming a bump structure using an etching composition for an under bump metallurgy layer
Abstract:
In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.
Abstract(Chinese):

在用于凸块下冶金（UBM）层的蚀刻组合物和形成凸块结构的方法中，蚀刻组合物包含约40重量％至约90重量％的过氧化氢（H 2 O 2），约1重量％ 至约20重量％的包含氢氧化铵（NH 4 OH）或四烷基氢氧化铵的碱性水溶液，约0.01重量％至约10重量％的醇化合物，和约2重量％至30重量％的 乙二胺类螯合剂。 蚀刻组合物可以有效地蚀刻包括钛或钛钨的UBM层并除去杂质。 形成凸块结构的方法可以采用这种蚀刻组合物。

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