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US08110853B2 Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication 有权
使用LDMOS(横向双扩散金属氧化物半导体)器件制造的高压CMOS /低电压CMOS技术的保护环结构

Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication
Abstract:
A semiconductor structure. The semiconductor structure includes a semiconductor substrate, a first transistor on the semiconductor substrate, and a guard ring on the semiconductor substrate. The semiconductor substrate includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface. The guard ring includes a semiconductor material doped with a doping polarity. A first doping profile of a first doped transistor region of the first transistor in the reference direction and a second doping profile of a first doped guard-ring region of the guard ring in the reference direction are essentially a same doping profile. The guard ring forms a closed loop around the first transistor.
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