Invention Grant
US08110853B2 Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication
有权
使用LDMOS(横向双扩散金属氧化物半导体)器件制造的高压CMOS /低电压CMOS技术的保护环结构
- Patent Title: Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication
- Patent Title (中): 使用LDMOS(横向双扩散金属氧化物半导体)器件制造的高压CMOS /低电压CMOS技术的保护环结构
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Application No.: US12475661Application Date: 2009-06-01
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Publication No.: US08110853B2Publication Date: 2012-02-07
- Inventor: Steven Howard Voldman
- Applicant: Steven Howard Voldman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Anthony J. Canale
- Main IPC: H01L27/085
- IPC: H01L27/085

Abstract:
A semiconductor structure. The semiconductor structure includes a semiconductor substrate, a first transistor on the semiconductor substrate, and a guard ring on the semiconductor substrate. The semiconductor substrate includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface. The guard ring includes a semiconductor material doped with a doping polarity. A first doping profile of a first doped transistor region of the first transistor in the reference direction and a second doping profile of a first doped guard-ring region of the guard ring in the reference direction are essentially a same doping profile. The guard ring forms a closed loop around the first transistor.
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