Invention Grant
- Patent Title: Antireflection portion in a shallow isolation trench for a photoelectric conversion device
- Patent Title (中): 用于光电转换装置的浅隔离沟槽中的抗反射部分
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Application No.: US12398681Application Date: 2009-03-05
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Publication No.: US08110859B2Publication Date: 2012-02-07
- Inventor: Satoko Iida
- Applicant: Satoko Iida
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-064822 20080313
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
A photoelectric conversion device includes a plurality of photoelectric conversion units each generating charges corresponding to light, an element isolation portion which electrically isolates the plurality of photoelectric conversion units, and an antireflection portion which is arranged to prevent reflection of light, which has entered the element isolation portion from above the element isolation portion, only on a bottom face of the element isolation portion or only on the bottom face and a lower part of a side face of the element isolation portion. In addition, a first semiconductor region is arranged below the element isolation portion. A refractive index of the antireflection portion takes a value between a refractive index of the element isolation portion and a refractive index of the first semiconductor region.
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