Invention Grant
- Patent Title: Semiconductor structure including trench capacitor and trench resistor
- Patent Title (中): 半导体结构包括沟槽电容和沟槽电阻
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Application No.: US12499452Application Date: 2009-07-08
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Publication No.: US08110862B2Publication Date: 2012-02-07
- Inventor: Kangguo Cheng , Robert M. Rassel
- Applicant: Kangguo Cheng , Robert M. Rassel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy and Presser, P.C.
- Agent Ian D. MacKinnon, Esq.
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L21/283
Abstract:
A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor structure. In a first instance, the capacitor trench has a linewidth dimension narrower than the resistor trench. The trench linewidth difference provides an efficient method for fabricating the trench capacitor and the trench resistor. In a second instance, the trench resistor comprises a conductor material at a periphery of the resistor trench and a resistor material at a central portion of the resistor trench.
Public/Granted literature
- US20090267186A1 SEMICONDUCTOR STRUCTURE INCLUDING TRENCH CAPACITOR AND TRENCH RESISTOR Public/Granted day:2009-10-29
Information query
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