Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US12327418Application Date: 2008-12-03
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Publication No.: US08110864B2Publication Date: 2012-02-07
- Inventor: Takashi Izumida , Masaki Kondo
- Applicant: Takashi Izumida , Masaki Kondo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-312124 20071203
- Main IPC: H01L29/778
- IPC: H01L29/778
Abstract:
In one aspect of the present invention, a nonvolatile semiconductor memory device may include a semiconductor substrate; a plurality of tunnel insulating films formed on the semiconductor substrate at predetermined intervals in a first direction; a plurality of floating gate electrodes each having a first portion and a second portion, the first portions being formed on the respective tunnel insulating films, the second portions being formed on the respective first portions and having smaller width than the first portions in the first direction; an inter-gate insulating film formed on the floating gate electrodes; and first and second control gate electrodes respectively formed on sidewalls, in the first direction, of the second portion of each of the plurality of floating gate electrodes with the inter-gate insulating film interposed therebetween.
Public/Granted literature
- US20090146203A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-06-11
Information query
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