Invention Grant
- Patent Title: Hybrid substrates and method of manufacture
- Patent Title (中): 混合基板及其制造方法
-
Application No.: US12400548Application Date: 2009-03-09
-
Publication No.: US08110874B2Publication Date: 2012-02-07
- Inventor: Katsura Miyashita
- Applicant: Katsura Miyashita
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Banner & Witcoff, Ltd.
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A hybrid substrate circuit on a common substrate is disclosed. A first circuit formed in a first semiconductor material is isolated via a buried oxide layer from a second circuit formed in a second semiconductor material. The first and second circuits may include CMOS, HEMTs, P-HEMTs, HBTs, radio frequency circuits, MESFETs, and various pFETs and nFETs.
Public/Granted literature
- US20090230432A1 Hybrid Substrates and Method of Manufacture Public/Granted day:2009-09-17
Information query
IPC分类:
