Invention Grant
- Patent Title: Solid state imaging device comprising hydrogen supply film and antireflection film
- Patent Title (中): 固态成像装置，包括氢供应膜和抗反射膜
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Application No.: US11216006Application Date: 2005-09-01
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Publication No.: US08110885B2Publication Date: 2012-02-07
- Inventor: Satoko Iida , Takanori Watanabe
- Applicant: Satoko Iida , Takanori Watanabe
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-257313 20040903
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146
Abstract:
Provided is a MOS type solid state imaging device, including a semiconductor substrate, a plurality of pixels arranged on the semiconductor substrate, each pixel having a light receiving element for generating a signal charge due to incident light, and a MOS transistor for reading the signal charge, and a hydrogen supply film arranged on the semiconductor substrate over the plurality of pixels and having a region corresponding to the light receiving element at least a part of which has a film thickness greater than the other part of the region.
Public/Granted literature
- US20060061674A1 Solid state imaging device, method of manufacturing same, and digital camera Public/Granted day:2006-03-23
Information query
IPC分类:
