Invention Grant
US08110886B2 Photodiode with integrated semiconductor circuit and method for the production thereof
有权
具有集成半导体电路的光电二极管及其制造方法
- Patent Title: Photodiode with integrated semiconductor circuit and method for the production thereof
- Patent Title (中): 具有集成半导体电路的光电二极管及其制造方法
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Application No.: US11921834Application Date: 2006-05-23
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Publication No.: US08110886B2Publication Date: 2012-02-07
- Inventor: Gerald Meinhardt , Franz Schrank , Verena Vescoli
- Applicant: Gerald Meinhardt , Franz Schrank , Verena Vescoli
- Applicant Address: AT Unterpremstätten
- Assignee: austriamicrosystems AG
- Current Assignee: austriamicrosystems AG
- Current Assignee Address: AT Unterpremstätten
- Agency: Cozen O'Connor
- Priority: DE102005026242 20050607
- International Application: PCT/EP2006/004903 WO 20060523
- International Announcement: WO2006/131209 WO 20061214
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A semiconductor circuit in a semiconductor body and a wafer bonding method for connecting the semiconductor circuit to another substrate, in which a diode is realized in a laminar structure. The semiconductor circuit is connected to the terminals of the diode by means of feedthroughs that extend through the semiconductor body.
Public/Granted literature
- US20100193893A1 Photodiode With Integrated Semiconductor Circuit and Method for the Production Thereof Public/Granted day:2010-08-05
Information query
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