Invention Grant
- Patent Title: Semiconductor device mounted with fuse memory
- Patent Title (中): 安装有保险丝存储器的半导体器件
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Application No.: US12837060Application Date: 2010-07-15
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Publication No.: US08110893B2Publication Date: 2012-02-07
- Inventor: Kengo Akimoto
- Applicant: Kengo Akimoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-188417 20060707
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A fuse element utilizing a reaction between two layers by feeding current is manufactured. A fuse element including a first layer formed of an oxide or a nitride and a second layer that becomes high resistant by nitridation or oxidation, in which the first layer and the second layer are in contact with each other, is manufactured. For example, the fuse element is manufactured by using indium tin oxide for the first layer and aluminum for the second layer. By generating joule heat by applying voltage to the first layer and the second layer, oxygen in the indium tin oxide enters the aluminum, which changes the aluminum into aluminum oxide that presents an insulating property. The fuse element can be manufactured by a similar process as that of forming a TFT.
Public/Granted literature
- US20100276782A1 SEMICONDUCTOR DEVICE MOUNTED WITH FUSE MEMORY Public/Granted day:2010-11-04
Information query
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