Invention Grant
- Patent Title: Semiconductor device with carbon-containing region
- Patent Title (中): 具有含碳区域的半导体器件
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Application No.: US12716817Application Date: 2010-03-03
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Publication No.: US08110897B2Publication Date: 2012-02-07
- Inventor: Taiji Noda
- Applicant: Taiji Noda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-279076 20040927
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
The semiconductor device of the present invention includes: a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; and a channel doped layer of the first conductivity type formed in the semiconductor region beneath the gate electrode. The channel doped layer contains carbon as an impurity.
Public/Granted literature
- US20100164017A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-07-01
Information query
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