Invention Grant
US08110904B2 Lead frame for semiconductor device and method of manufacturing of the same
有权
用于半导体器件的引线框架及其制造方法
- Patent Title: Lead frame for semiconductor device and method of manufacturing of the same
- Patent Title (中): 用于半导体器件的引线框架及其制造方法
-
Application No.: US13023906Application Date: 2011-02-09
-
Publication No.: US08110904B2Publication Date: 2012-02-07
- Inventor: Yasuko Imanishi , Takahiro Fukunaga
- Applicant: Yasuko Imanishi , Takahiro Fukunaga
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Priority: JP2010-051465 20100309
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
Provided are a semiconductor device lead frame and a method of manufacturing of the same that improve adhesive properties between plating layers when a plurality of plating layers are laminated, that control deterioration in wire bonding properties during the manufacturing process of a semiconductor device and worsening of solderability during packaging, and that effectively reduce manufacturing cost. Specifically, the lead frame (2a, 2b) has a laminated structure that includes a lower plating layer (22) formed on a conductive base material (21) and an uppermost plating layer (23), with an organic film (22) that has metal-binding properties formed between the lower plating layer (21) and the uppermost plating layer (23). The organic film (22) is formed as a monomolecular film in which functional organic molecules (11) self assemble. Each of the organic molecules (11) has functional groups (A1, A1) with metal-binding properties on both ends of a main chain (B1).
Public/Granted literature
- US20110221052A1 LEAD FRAME FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OF THE SAME Public/Granted day:2011-09-15
Information query
IPC分类: