Invention Grant
US08110907B2 Semiconductor device including first substrate having plurality of wires and a plurality of first electrodes and a second substrate including a semiconductor chip being mounted thereon, and second electrodes connected with first electrodes of first substrate
有权
包括具有多条导线的第一基板和多个第一电极的半导体装置和其上安装有半导体芯片的第二基板，以及与第一基板的第一电极连接的第二电极
- Patent Title: Semiconductor device including first substrate having plurality of wires and a plurality of first electrodes and a second substrate including a semiconductor chip being mounted thereon, and second electrodes connected with first electrodes of first substrate
- Patent Title (中): 包括具有多条导线的第一基板和多个第一电极的半导体装置和其上安装有半导体芯片的第二基板，以及与第一基板的第一电极连接的第二电极
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Application No.: US12318798Application Date: 2009-01-08
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Publication No.: US08110907B2Publication Date: 2012-02-07
- Inventor: Masahiro Yamaguchi , Emi Sawayama , Hiroshi Oyama , Shigeharu Tsunoda , Yasuo Amano , Naoki Matsushima
- Applicant: Masahiro Yamaguchi , Emi Sawayama , Hiroshi Oyama , Shigeharu Tsunoda , Yasuo Amano , Naoki Matsushima
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2008-033008 20080214
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a semiconductor chip, a first substrate, and a second substrate. The first substrate includes a plurality of wires and a plurality of first electrodes, each first electrode being connected with each wire. The second substrate includes the semiconductor chip that is mounted thereon, and a plurality of second electrodes with, each second electrode being connected with the each first electrode of the first substrate. The widths of the wires of the first substrate are different depending on the lengths of the wires. By changing the widths of the wires depending on their lengths, it is possible to reduce variation in stiffness of the electrodes and vicinities of electrodes, whereby variation in ultrasonic bonding strength can be reduced.
Public/Granted literature
- US20090206492A1 Semiconductor device Public/Granted day:2009-08-20
Information query
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