Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12408953Application Date: 2009-03-23
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Publication No.: US08111087B2Publication Date: 2012-02-07
- Inventor: Tomoaki Inokuchi , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
- Applicant: Tomoaki Inokuchi , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-084937 20080327
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A semiconductor integrated circuit includes an n-channel spin FET including one of a magnetic tunnel junction and a magneto-semiconductor junction, the n-channel spin FET including a gate terminal to receive an input signal, a source terminal to receive a first power supply potential, and a drain terminal connected to an output terminal, a p-channel FET including a gate terminal to receive a clock signal, a source terminal to receive a second power supply potential, and a drain terminal connected to the output terminal, a subsequent circuit connected to the output terminal, and a control circuit which turns on the p-channel FET to start charging the output terminal, then turns off the p-channel FET to end the charging, and supplies the input signal to the gate terminal of the n-channel spin FET.
Public/Granted literature
- US20090243653A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-10-01
Information query
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