Invention Grant
- Patent Title: Variable gain BiCMOS amplifier
- Patent Title (中): 可变增益BiCMOS放大器
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Application No.: US12855719Application Date: 2010-08-13
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Publication No.: US08111105B1Publication Date: 2012-02-07
- Inventor: Jun Zhou
- Applicant: Jun Zhou
- Applicant Address: HK New Territories
- Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee Address: HK New Territories
- Agency: Ella Cheong Hong Kong
- Agent Margaret A. Burke; Sam T. Yip
- Main IPC: H03F3/16
- IPC: H03F3/16
Abstract:
An amplifier circuit comprising: a MOSFET amplifier circuit; a BJT amplifier circuit; a MOSFET switch circuit arranged for switching between the MOSFET amplifier circuit and the BJT amplifier circuit to implement different gain modes of the amplifier circuit.
Public/Granted literature
- US20120038423A1 VARIABLE GAIN BICMOS AMPLIFIER Public/Granted day:2012-02-16
Information query
