Invention Grant
- Patent Title: Analysis method, exposure method, and device manufacturing method
- Patent Title (中): 分析方法,曝光方法和装置制造方法
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Application No.: US11517285Application Date: 2006-09-08
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Publication No.: US08111374B2Publication Date: 2012-02-07
- Inventor: Katsushi Nakano
- Applicant: Katsushi Nakano
- Applicant Address: JP Tokyo
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-261887 20050909
- Main IPC: G03B27/42
- IPC: G03B27/42

Abstract:
An analysis method includes a developing process (SA60), which develops the substrate, a first measuring process (SA50), which measures the abnormalities of the pre-development substrate, a second measuring process (SA70), which measures the abnormalities of the post-development substrate, and an analyzing process (SA80), which analyzes the exposure defects of a substrate exposed via a liquid based on the measurements results of the first measuring process (SA50) and the measurement results of the second measuring process (SA70).
Public/Granted literature
- US20070058148A1 Analysis method, exposure method, and device manufacturing method Public/Granted day:2007-03-15
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