Invention Grant
- Patent Title: Magnetic multilayered film current element
- Patent Title (中): 磁性多层膜电流元件
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Application No.: US12155924Application Date: 2008-06-11
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Publication No.: US08111488B2Publication Date: 2012-02-07
- Inventor: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- Applicant: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JPP2007-156848 20070613
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.
Public/Granted literature
- US20080311431A1 Magnetic multilayered film current element Public/Granted day:2008-12-18
Information query
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