Invention Grant
- Patent Title: Magneto-resistance effect element
- Patent Title (中): 磁阻效应元件
-
Application No.: US12314811Application Date: 2008-12-17
-
Publication No.: US08111489B2Publication Date: 2012-02-07
- Inventor: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- Applicant: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2006-188711 20060707
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
An example method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.
Public/Granted literature
- US20090104475A1 Magneto-resistance effect element Public/Granted day:2009-04-23
Information query
IPC分类: