Invention Grant
- Patent Title: Memristor-protection integrated circuit and method for protection of a memristor during switching
- Patent Title (中): 防转发保护集成电路及保护方法
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Application No.: US12695995Application Date: 2010-01-28
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Publication No.: US08111494B2Publication Date: 2012-02-07
- Inventor: Matthew D. Pickett , John Paul Strachan , Muhammad Shakeel Qureshi
- Applicant: Matthew D. Pickett , John Paul Strachan , Muhammad Shakeel Qureshi
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H02H9/08
- IPC: H02H9/08 ; H02H3/08 ; H02H9/02 ; H02H9/00

Abstract:
A memristor-protection integrated circuit. The memristor-protection integrated circuit includes a first current-bias circuit, a second current-bias circuit, an inverter, and a current limiter. The first and second current-bias circuits are configured to be coupled to first and second power-supply rails, respectively. The inverter is coupled to the first current-bias circuit and to the second current-bias circuit, and is configured to couple at least one memristor to at least one of the first current-bias circuit and the second current-bias circuit in response to an input signal applied to the inverter. The current limiter is coupled to the first current-bias circuit and coupled to the second current-bias circuit, and is configured to limit current flowing through the memristor.
Public/Granted literature
- US20110181347A1 MEMRISTOR-PROTECTION INTEGRATED CIRCUIT AND METHOD FOR PROTECTION OF A MEMRISTOR DURING SWITCHING Public/Granted day:2011-07-28
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