Invention Grant
- Patent Title: Capacitor
- Patent Title (中): 电容器
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Application No.: US12385938Application Date: 2009-04-24
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Publication No.: US08111501B2Publication Date: 2012-02-07
- Inventor: Gil-Sub Kim
- Applicant: Gil-Sub Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0039421 20080428
- Main IPC: H01G4/005
- IPC: H01G4/005
Abstract:
A method of forming a capacitor includes forming a cylindrical lower electrode structure having an internal support structure on a substrate, forming a dielectric layer on the cylindrical lower electrode structure and the support structure, and forming an upper electrode on the dielectric layer.
Public/Granted literature
- US20090268370A1 Capacitor Public/Granted day:2009-10-29
Information query
