Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12273874Application Date: 2008-11-19
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Publication No.: US08111538B2Publication Date: 2012-02-07
- Inventor: Keiji Hosotani , Yoshiaki Asao , Yoshihisa Iwata
- Applicant: Keiji Hosotani , Yoshiaki Asao , Yoshihisa Iwata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-302134 20071121
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A semiconductor memory device includes a memory cell array having a plurality of memory cells which are set into low-resistance states/high-resistance states according to “0” data/“1” data. An allocation of the “0” data/“1” data and the low-resistance state/high-resistance state is switched when a power source is turned on.
Public/Granted literature
- US20090129141A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-05-21
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