Invention Grant
- Patent Title: Smart detection circuit for writing to non-volatile storage
- Patent Title (中): 用于写入非易失性存储的智能检测电路
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Application No.: US12339327Application Date: 2008-12-19
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Publication No.: US08111539B2Publication Date: 2012-02-07
- Inventor: Luca G. Fasoli , Tianhong Yan , Jeffrey Koon Yee Lee
- Applicant: Luca G. Fasoli , Tianhong Yan , Jeffrey Koon Yee Lee
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory system includes a substrate, control circuitry on the substrate, a three dimensional memory array (above the substrate) that includes a plurality of memory cells with reversible resistance-switching elements, and a circuit for detecting the setting and resetting of the reversible resistance-switching elements.
Public/Granted literature
- US20090323392A1 SMART DETECTION CIRCUIT FOR WRITING TO NON-VOLATILE STORAGE Public/Granted day:2009-12-31
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