A semiconductor memory device includes first and second bit line provided in the same level layer above a semiconductor substrate, a first variable-resistance element disposed under the first bit line, having one terminal connected to one end of a current path of a first MOSFET, a second variable-resistance element disposed under the second bit line, and having one terminal connected to one end of a current path of a second MOSFET, a first interconnect layer connecting the first bit line to the other terminal of the first variable-resistance element, and connecting the first bit line to the other end of the current path of the second MOSFET, and a second interconnect layer connecting the second bit line to the other terminal of the second variable-resistance element, and connecting the second bit line to the other end of the current path of the first MOSFET.