Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12719737Application Date: 2010-03-08
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Publication No.: US08111543B2Publication Date: 2012-02-07
- Inventor: Yusuke Niki , Keiichi Kushida
- Applicant: Yusuke Niki , Keiichi Kushida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2009-163948 20090710
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C8/00

Abstract:
An SRAM cell includes one pair of drive transistors, one pair of load transistors, one pair of write access transistors, one pair of read drive transistors, and one pair of access transistors. A voltage source potential is supplied to drains of the read drive transistors.
Public/Granted literature
- US20110007557A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-01-13
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