Invention Grant
- Patent Title: Optical ovonic threshold switch
- Patent Title (中): 光学超声门限开关
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Application No.: US12269901Application Date: 2008-11-13
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Publication No.: US08111546B2Publication Date: 2012-02-07
- Inventor: Stanford R. Ovshinsky
- Applicant: Stanford R. Ovshinsky
- Applicant Address: US MI Troy
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Troy
- Agent Kevin L. Bray
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A method and device for accomplishing transformation of a switching material from a resistive state to a conductive state. The method utilizes a non-electrical source of energy to effect the switching transformation. The switching material may be a chalcogenide switching material, where the non-electrical source of energy initiates switching by liberating lone pair electrons from bound states of chalcogen atoms. The liberated lone pair electrons form a conductive filament having the characteristics of a solid state plasma to permit high current densities to pass through the switching material. The device includes a switching material with electrical contacts and may be interconnected with other elements in a circuit to regulate electrical communication therebetween.
Public/Granted literature
- US20100117040A1 Optical Ovonic Threshold Switch Public/Granted day:2010-05-13
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