Invention Grant
- Patent Title: Dynamic wordline start voltage for nand programming
- Patent Title (中): nand编程的动态字线启动电压
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Application No.: US12460073Application Date: 2009-07-13
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Publication No.: US08111549B2Publication Date: 2012-02-07
- Inventor: Aaron Yip
- Applicant: Aaron Yip
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
The present invention discloses a method of programming an MLC NAND flash memory device comprising: selecting a start value for a program voltage for a lower page; incrementing said program voltage to program said lower page; verifying a threshold voltage; determining said program voltage to achieve a desired value for said threshold voltage; applying an offset to said program voltage; and obtaining a start value for said program voltage for an upper page.
Public/Granted literature
- US20110007562A1 Dynamic wordline start voltage for nand programming Public/Granted day:2011-01-13
Information query
