Invention Grant
US08111551B2 Nonvolatile semiconductor memory device having protection function for each memory block
有权
具有对每个存储块的保护功能的非易失性半导体存储器件
- Patent Title: Nonvolatile semiconductor memory device having protection function for each memory block
- Patent Title (中): 具有对每个存储块的保护功能的非易失性半导体存储器件
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Application No.: US13099024Application Date: 2011-05-02
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Publication No.: US08111551B2Publication Date: 2012-02-07
- Inventor: Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
- Applicant: Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
- Applicant Address: JP Tokyo US CA Sunnyvale
- Assignee: Kabushiki Kaisha Toshiba,Sandisk Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Sandisk Corporation
- Current Assignee Address: JP Tokyo US CA Sunnyvale
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-336058 20030926
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C7/00

Abstract:
A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in the memory block. The readout protect flag can be output to an external device through the interface. When a write command is input from the interface, the write circuit executes the write command when the protect flag in the selected memory block has a first value and does not execute the write command when the protect flag has a second value.
Public/Granted literature
- US20110205794A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING PROTECTION FUNCTION FOR EACH MEMORY BLOCK Public/Granted day:2011-08-25
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