Invention Grant
- Patent Title: Nonvolatile memory device and method of operating the same
- Patent Title (中): 非易失存储器件及其操作方法
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Application No.: US12368646Application Date: 2009-02-10
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Publication No.: US08111556B2Publication Date: 2012-02-07
- Inventor: In Soo Wang , Joong Seob Yang
- Applicant: In Soo Wang , Joong Seob Yang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0050104 20080529
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A nonvolatile memory device and a method of operating the same. The nonvolatile memory device includes a memory cell array including memory cells for storing data, a temperature sensor and a controller. The temperature sensor outputs a temperature detection signal according to ambient temperatures while changing one or more pieces of reference voltage information, which are previously stored, when data is programmed into the memory cell array. The controller performs a verify operation of the program using a fast verify method and decides the number of steps which are comprised in step-shaped verify voltage pulse of the fast verify method according to the temperature detection signal.
Public/Granted literature
- US20090296465A1 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2009-12-03
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