Invention Grant
US08111559B2 Non-volatile random access memory with a control circuit for preventing an initial resistance failure, a solid state drive, and a computer system including the same
有权
具有用于防止初始电阻故障的控制电路的非易失性随机存取存储器，固态驱动器和包括其的计算机系统
- Patent Title: Non-volatile random access memory with a control circuit for preventing an initial resistance failure, a solid state drive, and a computer system including the same
- Patent Title (中): 具有用于防止初始电阻故障的控制电路的非易失性随机存取存储器，固态驱动器和包括其的计算机系统
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Application No.: US12662221Application Date: 2010-04-06
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Publication No.: US08111559B2Publication Date: 2012-02-07
- Inventor: Min Cheol Kwon , Dong Jun Shin , Sun-Mi Yoo , Jong-Chul Park
- Applicant: Min Cheol Kwon , Dong Jun Shin , Sun-Mi Yoo , Jong-Chul Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0030672 20090409
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
The non-volatile random access memory (RAM) includes a non-volatile RAM array, a buffer configured to buffer data to be programmed in the non-volatile RAM array and configured to buffer data read from the non-volatile RAM array, and a control block configured to read data from at least one of the non-volatile RAM array and the buffer based on whether the data to be read has been stored in the buffer, a temperature when the data was programmed, and a time lapse since the programming of the data.
Public/Granted literature
- US20100259998A1 Non-volatile RAM, and solid state drive and computer system including the same Public/Granted day:2010-10-14
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