Invention Grant
- Patent Title: Bulk bias voltage generating device and semiconductor memory apparatus including the same
- Patent Title (中): 体偏置电压产生装置和包括其的半导体存储装置
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Application No.: US12638120Application Date: 2009-12-15
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Publication No.: US08111561B2Publication Date: 2012-02-07
- Inventor: Ho Uk Song
- Applicant: Ho Uk Song
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0070116 20090730
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A bulk bias voltage generating device is configured to generate a first bulk bias voltage in a deep power down mode and a second bulk bias voltage in a normal mode. The first bulk bias voltage comprises an internal voltage level, and the second bulk bias voltage comprises an external voltage level.
Public/Granted literature
- US20110026333A1 BULK BIAS VOLTAGE GENERATING DEVICE AND SEMICONDUCTOR MEMORY APPARATUS INCLUDING THE SAME Public/Granted day:2011-02-03
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