Invention Grant
US08111563B2 Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same
失效
多级非易失性存储器件具有快速执行程序速度和编程方式相同的功能
- Patent Title: Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same
- Patent Title (中): 多级非易失性存储器件具有快速执行程序速度和编程方式相同的功能
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Application No.: US12659473Application Date: 2010-03-10
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Publication No.: US08111563B2Publication Date: 2012-02-07
- Inventor: Ho-Jung Kim , Sang-Beom Kang , Chul Woo Park , Hyun Ho Choi
- Applicant: Ho-Jung Kim , Sang-Beom Kang , Chul Woo Park , Hyun Ho Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0025757 20090326
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A nonvolatile memory device having a plurality of multi-level memory cells, the plurality being at least two, may be programmed by writing a least significant bit for each multi-level memory cell of the plurality of memory cells and, after the least significant bit has been written for each multi-level memory cell of the plurality of memory cells, writing a next significant bit for each multi-level memory cell.
Public/Granted literature
- US20100246246A1 Memory device, memory system having the same, and programming method of a memory cell Public/Granted day:2010-09-30
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