Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12684652Application Date: 2010-01-08
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Publication No.: US08111575B2Publication Date: 2012-02-07
- Inventor: Kaoru Mori , Shinya Fujioka , Yoshitaka Takahashi , Jun Ohno , Akihiro Funyu , Shinichiro Suzuki
- Applicant: Kaoru Mori , Shinya Fujioka , Yoshitaka Takahashi , Jun Ohno , Akihiro Funyu , Shinichiro Suzuki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.
Public/Granted literature
- US20100110818A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-05-06
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