Invention Grant
US08111576B2 High-voltage sawtooth current driving circuit and memory device including same
失效
高压锯齿电流驱动电路及包括其的存储器件
- Patent Title: High-voltage sawtooth current driving circuit and memory device including same
- Patent Title (中): 高压锯齿电流驱动电路及包括其的存储器件
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Application No.: US12620760Application Date: 2009-11-18
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Publication No.: US08111576B2Publication Date: 2012-02-07
- Inventor: Yong Hoon Kang
- Applicant: Yong Hoon Kang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0117615 20081125
- Main IPC: G11C7/02
- IPC: G11C7/02

Abstract:
A high-voltage sawtooth current driving circuit and a memory device including the same are described. In the high-voltage sawtooth current driving circuit includes a charge pump circuit configured to output a first voltage, a regulating circuit configured to regulate a second voltage using the first voltage output from the charge pump circuit, and a sawtooth current driver configured to generate a sawtooth current in response to the second voltage regulated by the regulating circuit.
Public/Granted literature
- US20100128552A1 HIGH-VOLTAGE SAWTOOTH CURRENT DRIVING CIRCUIT AND MEMORY DEVICE INCLUDING SAME Public/Granted day:2010-05-27
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