Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
- Patent Title (中): 基板加工装置及基板处理方法
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Application No.: US12260211Application Date: 2008-10-29
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Publication No.: US08112183B2Publication Date: 2012-02-07
- Inventor: Tomoyuki Yamada
- Applicant: Tomoyuki Yamada
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2008-014529 20080125
- Main IPC: G06F19/00
- IPC: G06F19/00

Abstract:
A substrate processing apparatus detects malfunction of mechanisms in MFC. An inert gas supply line, a first shut-off valve shutting off the inert gas supply, a process gas supply line, and a second shut-off valve shutting off the process gas supply are installed upstream of the MFC. A gas supply pipe connected to a process chamber, a third shut-off valve shutting off gas supply to the gas supply pipe, an exhaust vent line which is exhaustible, and a fourth shut-off valve shutting off gas supply to the exhaust vent line are installed downstream of the MFC. A main control unit determines that the MFC is abnormal if a transition time exceeds a previously set time when the MFC transitions from a closed state to an opened state while the shut-off valves are in a closed state.
Public/Granted literature
- US20090192652A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2009-07-30
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