Invention Grant
US08112243B2 Forward voltage short-pulse technique for measuring high power laser array junction temperture
有权
用于测量大功率激光二极管阵列结温的正向电压短脉冲技术
- Patent Title: Forward voltage short-pulse technique for measuring high power laser array junction temperture
- Patent Title (中): 用于测量大功率激光二极管阵列结温的正向电压短脉冲技术
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Application No.: US12118172Application Date: 2008-05-09
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Publication No.: US08112243B2Publication Date: 2012-02-07
- Inventor: Byron L. Meadows , Frazin Amzajerdian , Bruce W. Barnes , Nathaniel R. Baker
- Applicant: Byron L. Meadows , Frazin Amzajerdian , Bruce W. Barnes , Nathaniel R. Baker
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee Address: US DC Washington
- Agent Andrea Z. Warmbier; Robin W. Edwards
- Main IPC: G01K7/01
- IPC: G01K7/01
Abstract:
The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.
Public/Granted literature
- US20080319690A1 Forward Voltage Short-Pulse Technique for Measuring High Power Laser Diode Array Junction Temperature Public/Granted day:2008-12-25
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