Invention Grant
- Patent Title: Apparatus and method of generating power-up signal of semiconductor memory apparatus
- Patent Title (中): 产生半导体存储装置的上电信号的装置和方法
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Application No.: US12572549Application Date: 2009-10-02
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Publication No.: US08112653B2Publication Date: 2012-02-07
- Inventor: Duk-Ju Jeong
- Applicant: Duk-Ju Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2005-0098569 20051019
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F11/30
Abstract:
An apparatus for generating a power-up signal of a semiconductor memory apparatus includes a first power-up signal generator that generates a first power-up signal to be activated on the basis of a comparison between a power supply voltage level supplied to the semiconductor memory apparatus and a first set voltage level, and a second power-up signal generator that generates a second power-up signal to be activated with a predetermined delay time on the basis of a comparison between the power supply voltage level and a second set voltage level.
Public/Granted literature
- US20100023794A1 APPARATUS AND METHOD OF GENERATING POWER-UP SIGNAL OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2010-01-28
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