Invention Grant
US08115207B2 Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor
有权
真空通道晶体管和二极管发射热阴极电子,以及制造真空通道晶体管的方法
- Patent Title: Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor
- Patent Title (中): 真空通道晶体管和二极管发射热阴极电子,以及制造真空通道晶体管的方法
-
Application No.: US12606317Application Date: 2009-10-27
-
Publication No.: US08115207B2Publication Date: 2012-02-14
- Inventor: Dae Yong Kim , Hyun Tak Kim
- Applicant: Dae Yong Kim , Hyun Tak Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2008-0106581 20081029
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.
Public/Granted literature
Information query
IPC分类: