Invention Grant
US08115207B2 Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor 有权
真空通道晶体管和二极管发射热阴极电子,以及制造真空通道晶体管的方法

Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor
Abstract:
Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.
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